| PART |
Description |
Maker |
| K6R4008V1C |
512Kx8 Bit High Speed Static
|
Samsung semiconductor
|
| KM684002AE |
512Kx8 Bit High Speed Static RAM
|
Samsung
|
| K6R4008C1D |
512Kx8 Bit High Speed Static RAM(5.0V Operating)
|
Samsung semiconductor
|
| KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns
32Kx8 bit high speed static RAM (5V operating), 15ns
32Kx8 bit high speed static RAM (5V operating), 12ns
32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作（，进化引脚了。在商业温度范围工作
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| K6T4008C1B-DB70 |
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG
|
| MX26LV400TXBC-55G MX26LV400BXBC-70G MX26LV400TXBC- |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
MACRONIX INTERNATIONAL CO LTD
Macronix International Co., Ltd.
http://
|
| KM684000B KM684000BL KM684000BLG-5 KM684000BLG-5L |
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256K X 4 STANDARD SRAM, 8 ns, PDSO32
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的）在商业和工业温度范围操作
TV 23C 21#20 2#16 SKT PLUG REC
64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges
TV 55C 55#22D SKT PLUG RECP
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KM23C4000DTY KM23C4000DETY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
|
HITACHI[Hitachi Semiconductor]
|
| HM6208HSERIES 6208H HM6208H HM6208HJP-35 HM6208HJP |
65,536-word ′ 4-bit High Speed CMOS Static RAM
From old datasheet system
65,536-WORD ? 4-BIT HIGH SPEED CMOS STATIC RAM
|
Hitachi Semiconductor
|
| IDT7007L55G IDT7007L55GB IDT7007L55GI IDT7007L15J |
HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM
LCD BACKLIGHT INVERTER DRIVE IC; Package: SOIC-Wide; No of Pins: 20; Container: Tape & Reel
High Side Gate Driver; Package: SOIC; No of Pins: 8; Container: Rail
ER 19C 19#12 PIN RECP
ER 3C 3#16S PIN RECP THRMO
ER 6C 6#16S SKT RECP 高2K的8双端口静态RAM
HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 35 ns, PQFP80
HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM 高2K的8双端口静态RAM
HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 25 ns, PQCC68
HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 25 ns, PQFP80
|
Integrated Device Techn...
Integrated Device Technology, Inc.
http://
|
